Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
G. Beister, J. Maege, G. Erbert, G. Tränkle
Published in:
Solid-State Electronics, vol. 42, no. 11, pp. 1939-1945 (1998).
Abstract:
We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs (λ=0.98μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of Inr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
Copyright © 1998 Elsevier Science Ltd. All rights reserved.
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