Narrowband GaN external cavity diode laser with 400 mW output power at 445 nm for deep ultraviolet frequency doubling
N. Ruhnke, A. Müller, B. Eppich, R. Güther, M. Maiwald, B. Sumpf, G. Erbert, and G. Tränkle
Published in:
Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2015), Jun. 21-25, Munich, Germany, ISBN: 978-1-4673-7475-0, paper CB_P_6 (2015).
Abstract:
We present a GaN external cavity diode laser system with 400 mW optical power and an emission width of 20 pm at 445 nm suitable for frequency conversion into the UV spectral range.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Copyright © 2015 Optical Society of America. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from OSA.
Full version in pdf-format.