MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
D. Lia, V. Hoffmanna, E. Richtera, T. Tessaroa, Z. Galazkab, M. Weyersa, G. Tränklea,b
Published in:
J. Cryst. Growth, vol. 478, pp. 212-215 (2017).
Abstract:
We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900°C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
b Leibniz-Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany
Keywords:
B3. Light emitting diodes, B1. Oxides, A3. Metalorganic vapour phase epitaxy, A1. Nucleation.
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