MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
P. Kurpas, E. Richter, M. Sato1, F. Brunner, D. Gutsche, M. Weyers
Published in:
J. Cryst. Growth, vol. 170, no. 1–4, pp. 442-446, Proc. ICMOVPE-8, Jun. 9-13, 1996, Cardiff, UK (1997).
Abstract:
Carbon doping of GaAs with carbon tetrabromide (CBr4) in low pressure MOVPE has been investigated and applied to the fabrication of HBTs. Especially the hydrogen incorporation and the associated acceptor passivation has been studied. The hydrogen found in single GaAs:C layers is predominantly incorporated during cooling the sample under AsH3 after growth, n-Type capping layers can block this H indiffusion and GaAs:C base layers in HBTs show much lower H concentrations than GaAs:C single layers without a cap. A further reduction of acceptor passivation is possible by optimization of the growth procedure. First HBTs processed from layers with a base that was doped using CBr4 show promising DC and HF performance (β = 45, ft = 26 GHz for 2 × 20 µm2 devices).
Ferdinand-Braun-Institut für Höchstfrequenztechnik Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
1 Permanent address: NTT Basic Research Laboratories, Atsugi, Japan
Copyright © 1997 Published by Elsevier B.V.
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