MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs
A. Knauer, U. Zeimer, V. Kueller, and M. Weyers
Published in:
phys. stat. sol. (c), vol. 11, no. 3-4, pp. 377-380 (2014).
Abstract:
The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally resolved cathodoluminescence, scanning electron and atomic force microscopy. Cathodoluminescence mapping reveals compositional variations caused by different Ga incorporation during growth over macrosteps resulting from step bunching on the ELO-AlN. Introducing AlN interlayers as marker the influence of the macrosteps as well as of the growth rate on the development of Ga-rich regions was studied. With increasing growth rate from 0.2 to 1 µm/h the spatial extension of the Ga-rich regions is strongly reduced. At the same time the difference in Ga content is increased.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
AlGaN, AlN, ultraviolet, ELO-AlN, cathodoluminescence, MOVPE
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