J.-P. Koester, H. Wenzel, J. Fricke, P. Sammeta, O. Brox, M. Reggentin, P. Della Casa, M. Weyers & A. Knigge

Published in:

J. Witzens, J. Poon, L. Zimmermann, W. Freude (eds.), The 25th European Conference on Integrated Optics (ECIO 2024), Springer Proceedings in Physics, Springer, Cham, ISBN: 978-3-031-63377-5, vol. 402, pp. 536-539, doi:10.1007/978-3-031-63378-2_88 (2024).

Abstract:

Integrated ring resonators with high quality factors are of interest for a number of applications such as biosensing and spectroscopy. In the context of integrated laser systems, ring resonators can be utilized to achieve narrow linewidth and widely tunable lasers. In this contribution we present our efforts to realize passive high-Q ring resonators (Q > 10⁵) together with gain regions emitting around 1064 nm on the same GaAs-based chip. The enabling technology utilizes spatially selective quantum well removal and two-step epitaxy, as well as shallow and deep etched waveguides. The resulting platform will enable the realization of GaAs-based ring-resonator-coupled lasers.

© 2024 The Author(s), under exclusive license to Springer Nature Switzerland AG © 2024 The Author(s). Published by IOP Publishing Ltd
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