N.G. Weimann, S. Monayakul, S. Sinha, F.-J. Schmückle, M. Hrobak, D. Stoppel, W. John, O. Krüger, R. Doerner, B. Janke, V. Krozer, and W. Heinrich

Published in:

IEEE Trans. Compon. Packag. Manuf. Technol., vol. 7, no. 4, pp. 494-501 (2017).

Abstract:

We developed a chip mounting technology suitable for low-cost assemblies in the 300-500-GHz frequency range, compatible with standard chip and submount fabrication techniques. The waveguide and transition designs are compatible with indium phosphide heterobipolar transistor millimeter-wave monolithic integrated circuit chip architecture. Increased conductor shielding in different multilayer thin-film waveguide topologies is applied to suppress radiative losses, enabling low-loss interconnects up to 500-GHz bandwidth. Standard flip-chip align-and-place equipment is used to assemble the chips onto submounts. Losses are evaluated by banded S-parameter measurements between 10 MHz and 500 GHz. For an optimized stripline-to-stripline transition, an insertion loss of less than 1 dB was measured at 500 GHz.

Index Terms:

Flip-chip devices, heterobipolar transistor, indium phosphide (InP), millimeter-wave (mm-wave) integrated circuits, semiconductor device packaging./p>

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