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Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

H. Wenzel, J. Fricke, A. Maaßdorf, N. Ammouri, C. Zink, D. Martin, and A. Knigge

Published in:

Electron. Lett., vol. 58, no. 3, pp. 121-123, doi:10.1049/ell2.12366 (2022).

Abstract:

We present a multi-active-region bipolar-cascade distributed-Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in a single waveguide core sharing the same third-order vertical mode. A slope efficiency of 2.25 W/A was measured with a threshold current density of 400 A/cm2. Due to the implemented 7th Bragg order surface grating, the laser exhibits a narrow optical spectrum with a width of 0.3 nm and a thermal detuning of 60 pm/K.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany

Copyright © 2021 The Authors. Electronics Letters published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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