Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
H. Wenzel, J. Fricke, A. Maaßdorf, N. Ammouri, C. Zink, D. Martin, and A. Knigge
Electron. Lett., vol. 58, no. 3, pp. 121-123, doi:10.1049/ell2.12366 (2022).
We present a multi-active-region bipolar-cascade distributed-Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in a single waveguide core sharing the same third-order vertical mode. A slope efficiency of 2.25 W/A was measured with a threshold current density of 400 A/cm2. Due to the implemented 7th Bragg order surface grating, the laser exhibits a narrow optical spectrum with a width of 0.3 nm and a thermal detuning of 60 pm/K.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
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