A. Knauer^a, I. Rechenberg^a, F. Bugge^a, S. Gramlich^a, G. Oelgart^b, A. Oster^a, M. Weyers^a

Published in:

J. Cryst. Growth, vol. 170, no. 1–4, pp. 281-286, Proc. ICMOVPE-8, Jun. 9-13, 1996, Cardiff, UK (1997).

Abstract:

The luminescence properties of In_1−xGa_xAs_yP_1−y layers and heterostructures grown lattice matched to GaAs by metalorganic vapour-phase epitaxy (MOVPE) were studied and correlated to the crystalline properties. For laser structures emitting around 800 nm a red-shift of the emission from the active layer (y = 0.72) grown at 680°C together with an anomalous temperature behaviour and excitation dependence of the bandgap is observed. Although some degree of ordering is observed for thick layers of this composition, polarization dependent photoluminescence does not indicate ordering of the quantum well to be the main reason for this excitation dependence. Instead, interfacial In-rich layers are found to be responsible. The thickness of these interfacial layers strongly depends on substrate misorientation and growth conditions.

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