Increased slow-axis beam quality in 9xx nm high power broad area diode lasers by modifying the lateral current profile at the device edges
M. Winterfeldt, P. Crump, S. Knigge, A. Maaßdorf, and G. Erbert
Published in:
Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2015), Jun. 21-25, Munich, Germany, ISBN: 978-1-4673-7475-0, paper CB_P_5 (2015).
Abstract:
Improved radiance is achieved in 9xx-nm broad area lasers by suppressing lateral current spreading using deep proton-bombardment. Beam parameter product at 7W output was reduced by 20% to 2.1mm-mrad. However, efficiency is also 7% reduced.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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