In-situ curvature measurements applied to MOVPE-based growth of edge-emitting diode lasers
A. Maaßdorf1, O. Schulz3, M. Zorn2, J.-T. Zettler3, and M. Weyers1
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2014), Denver, USA, May 19-22, pp. 255-256 (2014).
Abstract:
We apply in-situ curvature measurements to GaAs/AlGaAs based edge emitting diode laser growth. Along with an increased overall AlGaAs thickness the room temperature convex wafer bow increases as well. Since this is mainly caused by the thermal expansion mismatch between GaAs and AlAs we make use of tensile strained Al0.85Ga0.15AsyP1-y cladding layers to partly compensate for the negative curvature swing during the cool down phase.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Jenoptik Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany
3 LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany
Keywords:
MOVPE, In-situ curvature, X-ray diffraction
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