Highly linear fundamental up-converter in InP DHBT technology for W-band applications
M. Hossain, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer
Published in:
Microw. Opt. Technol. Lett., vol. 62, no. 7, pp. 2513-2517, doi:10.1002/mop.32357 (2020).
Abstract:
A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10±1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Keywords:
Local oscillator (LO), indium phosphide double heterojunction bipolar transistor (DHBT), single sideband (SSB), upper side band (USB), lower side band (LSB), transferred-substrate (TS) process, Gilbert cell (GC) mixer
Copyright © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
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