Highly Efficient 200-GHz Fixed-Frequency Fundamental Source in Transferred-Substrate InP DHBT Technology
M. Hossain, T. Kraemer, O. Krueger, V. Krozer and W. Heinrich
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Tampa Bay, USA, Jun 1-6, WE2H-5 (2014).
Abstract:
A 197-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate InP-DHBT process. It delivers 0 dBm output power, with a phase noise of -88 dBc/Hz at 1.6 MHz offset frequency. DC consumption is only 22 mW from a 1.4 volts power supply, which corresponds to the highest overall DC-to- RF efficiency of a millimeter-wave frequency source reported to date.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Index Terms:
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillator, millimeter wave (mm-wave) source, sub-Terahertz, transferred-substrate process, benzocyclobutene (BCB)
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