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High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers

G. Erbert, F. Bugge, A. Knauer, J. Sebastian, K. Vogel, M. Weyers

Published in:

Proc. of SPIE, vol. 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, Photonics West, San Jose, USA, Jan 27 - Feb 2 (1996).

Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin, Germany

© 1996 COPYRIGHT SPIE--The International Society for Optical Engineering. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the SPIE.

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