Hetero-Integration of Bipolar InP Chiplets on BiCMOS for Broadband Applications within the EU-Funded APECS Pilot Line

W. Heinrich, M. Rausch, C. Stölmacker, T. Shivan, R. Doerner, V. Krozer, and H. Yacoub

Published in:

26th International Microwave and Radar Conference (MIKON 2026), Kraków, Poland, May 18-21, ISBN 978-83-969726-7-5, pp. 254-257 (2026).

Abstract:

The paper presents a hetero-integration approach combining InP-HBT chiplets with BiCMOS chips through a microbump flip-chip scheme. The interconnects offer more than 200 GHz bandwidth, the InP process allows to realize MMICs with a transistor fmax of more than 500 GHz, which qualifies it for both D-band transceivers and high-data-rate drivers and transimpedance amplifiers. The platform is being developed in the framework of the APECS pilot line funded by the EU and the German government. It will be made accessible to external partners.

Keywords:

Hetero-integration, InP HBT, BiCMOS, D-band, transceiver, microbumps, pilot line.

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