H. Strusny, P. Ressel, K. Vogel, J. Würfl

Published in:

Nuclear Instruments and Methods in Physics; Research Section B: Beam Interactions with Materials and Atoms, vol. 112, no. 1-4, pp. 298-300 (1996).

Abstract:

4He+ has been implanted in MOVPE grown GaAs/InGaP/InGaAsP layers to obtain damage-isolation. The electrical properties and the thermal long-term stability of the implanted regions have been investigated. Multi-energy implantation was performed to form the high resistance layers. The sheet resistance of the implanted GaAs/InGaP/InGaAsP samples was determined by current-voltage measurements after 30 s rapid thermal annealing in the temperature range of 200-600°C. High resistance regions ( 10⁹ Ω/()) are created in the GaAs/InGaP/InGaAsP layers. The resistance exhibits a flat maximum after annealing in the temperature range between 300 and 450°C. The sheet resistance of the implanted regions was measured to determine the dependence on aging time at 100°C and 250°C. It was stable for the duration of 100 h. Range parameters such as the projected range and the projected standard deviation in InGaP were experimentally determined as a function of energy.

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