F. Bugge, K. Paschke, G. Blume, D. Feise, U. Zeimer, M. Weyers

Published in:

J. Cryst. Growth, vol. 414, pp. 205-209 (2015).

Abstract:

Laser structures for emission wavelengths of 1120 nm and 1180 nm, suitable for non-linear frequency conversion to yellow-green and yellow-orange, were developed. At 1120 nm emission wavelength different active regions and structures were investigated. The introduction of a GaAs spacer layer between GaAsP barriers and InGaAs QWs reduces threshold and transparency current density significantly. Life time measurements were done successfully over 1700 h for broad area and 10000 h for ridge waveguide tapered lasers. Broad area laser diodes with a partly strain-compensated 6 nm InGaAs QW, emitting at 1180 nm, show lifetimes above 1000 h at an output power of 1.5 W. The required beam quality was achieved by processing a ridge waveguide laser with an included distributed Bragg reflector. Such a laser emits up to 200 mW in single mode output power.

Keywords:

A1. Interfaces, A3. Metalorganic vapor phase epitaxy, A3. Quantum wells, B2. Semiconducting III-V materials, B3. Laser diodes.

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