Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
M. Tapajna1, O. Hilt2, E. Bahat-Treidel2, J. Würfl2, and J. Kuzmik1
Published in:
IEEE Electron Device Lett., vol. 37, no. 4, pp. 385-388 (2016).
Abstract:
Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different gate voltages and temperatures was analyzed. Stress-induced gate current degradation was found to be consistent with the percolation process. Obtained time-to-breakdown data were interpreted using the Weibull statistics, and the maximum allowed gate operating voltage was estimated. The gate degradation was found to be weakly dependent on temperature with an activation energy of 0.1 eV.
1 Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava 841 04, Slovakia
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Index Terms:
AlGaN/GaN HEMT, normally-off, p-GaN gate, reliability, time-to-breakdown, Weibull statistics.
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