GaN HEMT Noise Model Performance under Nonlinear Operation
M. Rudolph1,2, L. Escotte3,4, and R. Doerner2
Published in:
Proc. 44th European Microwave Conf. (EuMC 2014), Rome, Italy, Oct. 6-9, pp. 1416-1419 (2014).
Abstract:
This paper investigates the capability of Pospieszalski-type and Pucel-type noise model implementations to predict the truly nonlinear noise behavior of GaN HEMT devices. The bias-dependence of the noise model parameters is introduced for both models. It is then addressed how the difference in model topology could yield different noise performance in the nonlinear regime. Also dispersion is taken into account. Comparison of simulation results with nonlinear noise measurement shows that both implementations show equally good prediction of the noise figure even if the device is driven into heavily nonlinear operation by a blocking signal.
1 Ulrich-L.-Rohde Chair for RF and Microwave Technology, Brandenburg University of Technology
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 LAAS-CNRS
4 University of Toulouse (UPS), France
Index Terms:
MODFETs, noise, semiconductor device modeling, semiconductor device noise modeling
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