G-Band Frequency Doubler based on InP Transferred-Substrate Technology
T. Al-Sawaf, M. Hossain, N. Weimann, O. Krüger, V. Krozer, W. Heinrich
Published in:
Proc. 10th European Microwave Integrated Circuits Conf. (EuMiC 2015), Paris, France, Sep. 7-8, pp. 61-64 (2015).
Abstract:
A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of 4 × 0.8 × 5 µm2. Total chip size is 0.9 × 0.78 mm2. The doubler delivers a maximum output power of 10 dBm at 160 GHz. At the same frequency, the circuit exhibits a conversion gain up to 4 dB and a maximum output efficiency of 14% for a total DC consumption of 72 mW. Output power stays above 7 dBm from 140 to 180 GHz, which yields a 3-dB bandwidth of 40 GHz. The positive gain values demonstrate the inherent advantage of active multipliers against their passive counterparts.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
millimeter-wave circuits; signal source; G-band; frequency doubler; hetero-integration; InP DHBT.
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