Experimental and theoretical studies into the limits to peak power in GaAs-based diode lasers
P. Crump, H. Wenzel, T. Kaul, M. Winterfeldt, R. Platz, G. Erbert and G. Tränkle
Published in:
25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan, Sep. 12-15, p. WS4 (2016).
Abstract:
An overview is presented of progress in studies to diagnose and address limits to peak power in high power diode lasers. Key terms in advanced structures include carrier losses in the p-side waveguide, self-heating effects in the quantum well, and longitudinal spatial hole-burning.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Copyright © IEICE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IEICE.
Full version in pdf-format.