Experimental Analysis and Modeling of GaN Normally-off HFETs with Trapping Effects
J. Böcker1, H. Just1, O. Hilt2, N. Badawi1, J. Würfl2, S. Dieckerhoff
Published in:
17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Geneva, Switzerland, Sep. 8-10 (2015).
Abstract:
A 70 mΩ / 600 V normally-off AlGaN/GaN HFET is analyzed and modeled. In particular, static and dynamic characteristics are investigated with the focus on modeling trapping effects and their influence on the on-state resistance and on the switching characteristic. Two methods to measure these trapping effects are compared, a clamped measurement of the on-state resistance and a measurement of a shift in the transfer characteristic. Both methods are suitable to extract time constants of trapping effects, which are required for the trap model. A comparison of the measurements demonstrates the link between the increased dynamic on-state resistance and the threshold voltage shift. The developed model is suitable to simulate the performance of the HFET during switching and conduction intervals.
1 Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Device characterisation, Device modeling, Device simulation, Gallium Nitride (GaN).
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