Exciton localization in semipolar (1122) InGaN multiple quantum wells
D.V. Dinh1, F. Brunner2, M. Weyers2, B. Corbett1, P.J. Parbrook1,3
Published in:
J. Appl. Phys., vol. 120, no. 05, pp. 055705 (2016).
Abstract:
The exciton localization in semipolar (1122) InxGa1-xN (0.13≤x≤0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.
1 Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
3 School of Engineering, University College Cork, Cork, Ireland
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