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Effect of heavy Ga doping on defect structure of SnO2 layers

A. Mogilatenko1,2, H. Kirmse2, O. Bierwagen3,5, M. Schmidbauer4, M.-Y. Tsai5, I. Häusler2, M.E. White5, and J.S. Speck5

Published in:

phys. stat. sol. (a), vol. 211, no. 1, pp. 87-92 (2014).

Abstract:

Crystal defects in Ga-doped SnO2 grown on SnO2 buffer layers on r-plane sapphire by plasma-assisted molecular beam epitaxy have been analysed by transmission electron microscopy (TEM). The (101)-oriented epitaxial SnO2 buffer layers contain a high number of crystallographic shear plane (CSP) defects (∼1011 cm-2) and threading dislocations (TDs, ∼1010 cm-2). However, their density reduces with increasing layer thickness. Whereas a Ga atomic concentration of 3.2×1016 cm-3 does not lead to any change in the defect structure of the SnO2 layers, heavily doped SnO2 layers ([Ga]∼6.1×1020 cm-3) contain a continuous network of coherent Ga-rich precipitates appearing as platelets in crystallographically equivalent SnO2(100) and SnO2(010) planes. Electron conduction through this network might explain the reduced electrical resistivity compared to semi-insulating SnO2 with lower Ga concentration

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institute of Physics, Humboldt University of Berlin, Newtonstr. 15, 12489 Berlin, Germany
3 Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany
4 Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
5 Materials Department, University of California, Santa Barbara, California 93106-5050, USA

Keywords:

defects, doping, SnO2, transparent conducting oxides

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