Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN-Based UV LED

I. Marouf^1,2, F. Römer¹, M. Schilling³, F. Biebler^3,4, J. Höpfner³, M. Grigoletto^3,5, T. Wernicke³, M. Kneissl^3,5, and B. Witzigmann¹

Published in:

phys stat sol (a), vol. 223, no. 17, pp. e70484, doi:10.1002/pssa.70484 (2026).

Abstract:

This study investigates carrier transport and confinement within multiquantum well (MQW) AlGaN-based UV light-emitting diodes (LEDs), based on three different MQW structures that have a marker QW: 6-MQW, 12-MQW, and 21-MQW. The main emission is at 233 nm, with one marker QW emitting at 250 nm included. Through electro-optical simulations calibrated against experimental data, hole injection into and inter-well transport in the MQW active region (AR), and its impact on the internal quantum efficiency is explored. Findings show that due to a relatively shallow hole confinement potential, inter-well hole transport is efficient, leading to a homogenous hole distribution in 6-MQW structures. In addition, barrier n-doping is boosting radiative recombination due to higher electron density in the AR. The optimum doping level of 4 × 10¹⁸/cm³ improves charge balance and reduces leakage currents, aligning closely with experimental observations. This study emphasizes the importance of optimizing QW depth and doping to enhance UV-LED performance, particularly in applications requiring efficient far-UVC emission for germicidal purposes.

Keywords:

carrier transport, device simulation, III-nitride, light-emitting diode, Modeling, MQW LED

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium,provided the original work is properly cited.© 2026 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH.
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