Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
B. Corbetta, Z. Quana, D.V. Dinha, G. Kozlowskia, D. O'Mahonya, M. Akhtera, S. Schulza, P. Parbrooka, P. Maaskanta, M. Caliebeb, M. Hockerc, K. Thonkec, F. Scholzb, M. Pristovsekd, Y. Hand, C.J. Humphreysd, F. Brunnere, M. Weyerse, T.M. Meyerf, L. Lymperakisg
Published in:
Proc. SPIE 9768, Photonics West, San Francisco, USA, Feb. 13-18, 97681G (2016).
Abstract:
We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were obtained by metal organic vapour phase epitaxy (VPE) and hydride VPE techniques. Chemical-mechanical polishing was used to obtain smooth surfaces for the subsequent growth of LED structures. Ohmic contacts to the p-type GaN were obtained despite the lower activated acceptor levels. The LEDs show excellent output power and fast carrier dynamics. Freestanding LEDs have been obtained by use of laser-lift-off. The work is the result of collaboration under the European Union funded ALIGHT project.
a Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
b Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany
c Institute of Quantum Matter, Ulm University, 89069 Ulm, Germany
d Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
e Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin
f OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany
g Max-Planck-Institut fur Eisenforschung, Max-Planck-Str. 1, Dusseldorf 40237, Germany
Keywords:
GaN, semipolar, upscaling, LED, visible light communication (VLC), MOVPE.
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