Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
A. Müller, J. Fricke, F. Bugge, O. Brox, G. Erbert, B. Sumpf
Published in:
Proc. SPIE 9767, Photonics West, San Francisco, USA, Feb. 13-18, 97671I (2016).
Abstract:
Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured by electron beam lithography. At a heatsink temperature of 15°C an optical output power of 12.7 W with an electro-optical efficiency > 40% is obtained. The corresponding emission wavelength is 1030.57 nm and spectral bandwidths of 0.02 nm are measured over the whole power range. At 10.5 W of optical power 8.1 W are contained in the central lobe. The measured beam propagation ratio and brightness are 1.1 (1/e2) and 700 MWcm-2sr-1, respectively. With these parameters, the laser is suitable for applications such as non-linear frequency conversion.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
Tapered diode laser, distributed Bragg reflector, diffraction-limited, near-infrared, narrowband emission.
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