Coplanar Passive Elements on Si Substrate for Frequencies up to 110 GHz
W. Heinrich1, J. Gerdes2, F.J. Schmückle1, C. Rheinfelder1, and K. Strohm3
Published in:
IEEE Trans. Microwave Theory Tech., vol. 46, no. 5, pp. 709-712 (1998).
Abstract:
This paper provides both modeling and design information on coplanar passive elements on silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC’s) on high-resistivity substrate are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field–theoretical simulations and verified by S-parameter measurements up to 110 GHz.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Mannesmann-Arcor AG, Forschungszentrum Eschborn,
65760 Frankfurt, Germany
3 Daimler-Benz Research, 89081 Ulm, Germany
Index Terms:
Branchline coupler, coplanar element library, coplanar elements, silicon substrate, spiral inductor, T-junction
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