Compact 12×12-Pixel THz Camera using AlGaN/GaN HEMT Technology Operating at Room Temperature
T. Liebchen1,2, E. Dischke1,2, A. Rämer2, F. Müller2, L. Schellhase2, S. Chevtchenko2, W. Heinrich2, V. Krozer1,2
Published in:
46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Chengdu, China, Virtual Event, Aug. 29 - Sep. 3, ISBN: 978-1-7281-9424-0 (2021).
Abstract:
We report on a THz detector camera with a monolithically integrated 12×12 detector array of AlGaN/GaN TeraFETs. The camera operates in the range 100 GHz - 2 THz and is the first of its kind with a multidimensional array of 144 pixel based on III-V semiconductor technology. The sensitivity efficiency of the camera is evaluated between 100 GHz and 1 THz using InGaAs-based photoconductive signal sources. Its analog frontend electronics allows a frame rate of around 100 fps while maintaining a 0.5 nA (RMS) input referred noise current. Additionally, the spectral frequency response is measured in order to evaluate the potential of these detectors for industrial applications.
1 Physikalisches Institut, Goethe University Frankfurt, Frankfurt, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
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