An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
M. Hossain, K. Nosaeva, B. Janke, N. Weimann, O. Krueger, V. Krozer and W. Heinrich
Published in:
Proc. 45th European Microwave Conf. (EuMC 2015), Paris, France, Sep. 7-10, pp. 841-844 (2015).
Abstract:
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based on a third harmonic generation from a fundamental differential cross-coupled topology. The oscillator delivers -8.5 dBm output power. DC consumption is only 28 mW from a 1.5 volts power supply, which corresponds to 0.5% overall DC-to-RF efficiency. To the authors' knowledge, this is the highest DC-to-RF efficiency harmonic oscillator beyond the 220 GHz frequency band published so far.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Harmonic oscillator, transition frequency (ft), maximum oscillator frequency (fmax), InP-DHBT, transferred-substrate (TS), sub-millimeter-wave, signal source, THz, Sub-THz.
© 2015 EuMA. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
Full version in pdf-format.