A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz
E. Ersoy , S. Chevtchenko, P. Kurpas, W. Heinrich
Published in:
8th German Microwave Conference (GeMiC 2014), Aachen, Germany, Mar. 10-12, ITG-Fachbericht Band 246, ISBN 978-3-8007-3585-3 (2014).
Abstract:
A non-uniform distributed power amplifier for the frequency range from 2 to 12 GHz is presented. The coplanar GaN MMIC has 1.8 × 2.4 mm2 chip size. It achieves over the whole frequency band a small-signal gain of 9 to 14 dB. The maximum output power of the amplifier reaches 35.5 and 39.5 dBm at 2 GHz and 10 GHz, respectively, while the PAE changes between 5 and 35 %. Benchmarking shows that the presented amplifier provides a good trade-off regarding bandwidth, output power, gain and power added efficiency (PAE).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
GaN, HEMT, broadband, distibuted amplifier, power amplifier, travelling wave amplifier (TWA).
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