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A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

A. Shrestha1, R. Doerner1, H. Yacoub1, T.K. Johansen2, W. Heinrich1, V. Krozer1, M. Rudolph1,3, A. Wentzel1

Published in:

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 225-228 (2022).

Abstract:

This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like Wband PA to date.

1 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany
2 Technical University of Denmark (DTU), Kgs. Lyngby, Denmark
3 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany

Keywords:

power amplifier, class-F PA, W-band PA, InP DHBT, switch-mode, power-added efficiency.

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