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Aerial Image of the Ferdinand-Braun-Institut
© FBH/Dimitri Stoppel
Aerial photograph of the Ferdinand-Braun-Institut. In the forefront, the latest extension building of FBH can be seen offering 1,800 sqm laboratory and office space. On the left side, the image shows the backward façade of the cleanroom cladded with solar modules. The main entrance is situated on the rear side of this image.
Metal Organic Vapor Phase Epitaxy (MOVPE) - Planetary Reactor
Multi-wafer reactor for Metal Organic Vapor Phase Epitaxy (MOVPE) of gallium nitride. Substrate wafers are put inside a sluice and seperately placed into the reactor. During this first step on its way to the final device atomic-thin layers are deposited onto the substrate material (= wafer).
Plasma Etching in the Cleanroom
© FBH/Petra Immerz
Dry etching technique that is used, for example, in semiconductor technology to remove material in a controlled manner. Defined parts of the substrate are therefore coated with a material such as photoresist – these parts withstand the subsequent etching process unharmed. This process allows to realize structures in the millimeter range and below.
Microtechnologist in the Cleanroom
A microtechnologist mounting laser stacks – such diode lasers deliver specifically high output powers as, for example, required for materials processing.
On-wafer Microwave Measurement
Measurement of single circuits with special probe tips, which only insignificantly distort the RF properties of the circuits. The distance of the contacts is usually in the range of only 50-150 micrometer.
Electroluminescence Measurement of AlGaN UV LEDs Using a Wafer Mapper
This wafer mapper is used to determine the characteristic properties of AlGaN-based UV LEDs on a 2-inch wafer such as optical power, voltage, and wavelength and to investigate their uniformity. The UV radiation of these LEDs is used, among others, for medical applications in dermatology, for sensing, and disinfection.
Wafer with Terahertz Circuits
Terahertz (THz) circuits in InP-on-BiCMOS technology for THz signal generation. The high-frequency indium phosphide (InP) double-heteorostructure bipolar transistors (DHBT) are heterointegrated onto a silicon BiCMOS wafer. The dark areas indicate BiCMOS oscillators at 82 GHz and the brighter circuit parts are InP-DHBT multipliers and amplifier circuits.
Wafer with Laser Diodes
Completely processed 3" wafer with laser diodes.
UV Light-Emitting Diode (LED)
© FBH/Petra Immerz
FBH UV LED mounted on printed circuit board (PCB – mounting by OSA Opto Light and CiS Forschungsinstitut für Mikrosensorik). In the overall system, these UV LEDs are arranged together with current sources on large-scale PCBs, thus achieving optimum heat dissipation. UV LED irradiation equipment is used for plant lighting, disinfection, and water purification. The UV LED displayed here is encapsulated in order to protect it from environmental influences like humidity. The device is integrated into a UV LED module for plant irradiation used to study the generation of health-promoting secondary metabolites in plants.
New Generation of Laser Diodes
Design improvements led to enhanced broad area lasers featuring high output powers and high efficiencies at the same time – up to now, high output powers usually came along with a significantly poorer efficiency (conversion efficiency of electrical into optical power).
Fiber-Coupled Laser Modules for Systems Integration
By fitting fiber outputs to diode laser modules the complex diode laser radiation can be easily integrated into systems, thus making it utilizable for a wide variety of applications. These range from bio medical technology through production automatization to basic research. Laser modules with fiber output are ideally suited to safely guide high output powers up to the watt range right to the point of usage. The fibers can also be realized polarization-maintaining in order to optimally use the radiation for polarization-sensitive effects such as frequency doubling.
ps Light Source with Integrated Pulse Picker
This picosecond light source with hybrid-integrated electronics combines FBH’s competencies in optoelectronics and microwaves. Such laser sources based on diode lasers offer a high application and market potential in materials processing, sensors, and analytics. They are the center pieces of FBH’s compact pulse light sources that deliver flexible pulses in the pico- and nanosecond range with nanojoule energies.
Digital Power Amplifier Module for 5G, the Mobile Communication of the Future
The novel module can be flexibly used for different frequencies, is very compact, and highly efficient. These features make it particularly attractive with respect to the digitalization of base stations for mobile communications since the power amplifier mainly determines the efficiency of the overall system and thus operational costs.
Symmetric Half Bridge
© FBH/P. Immerz
They each consist of two GaN-based power switching transistors in normally-off technology and two GaN free-wheeling diodes - in an electronic power converter they are interconnected to a full bridge. The symetrically built half bridges are designed to achieve an output power of 10 kW with an efficiency clearly > 90%. Such power converters are suited e.g. for on-board charging units in e-cars.