FBH publication among the top 10 % of downloads

The publication “Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors” by Hossein Yazdani, Serguei Chevtchenko, Frank Brunner, Günther Tränkle, and Joachim Würfl stands out as one of the most widely read papers in physica status solidi (a) - applications and materials science.

The paper investigates the fabrication of Au-free ohmic contacts for mm-wave GaN heterojunction field-effect transistors. The authors have tested various metallization and rapid thermal annealing temperature/duration combinations and found Ta/Al/W to be particularly effective. They achieved contact resistance of ≈0.28 ± 0.18 Ω mm after annealing at 600 °C and also observed significant improvements in surface roughness and edge definition compared to Au-based contacts.