The article "Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes" by Enrico Brussatera et. al. has been published as Editor's Pick. This publication incorporates the results of work on vertical GaN pn diodes up to 900 V breakdown voltage. Their GaN drift zone layer with controlled low n-doping is necessary to realize vertical 1200 V GaN transistors.