Simulations enhance the development of power devices

(...) One interesting and promising variant of the normally off nitride transistor is the p-type GaN gate device that has been pioneered by Oliver Hilt and co-workers from the Ferdinand-Braun-Institut in Leibniz, Germany. As the paper presented by this group at last year's International Symposium on Power Semiconductor Devices and ICs did not report some of the key dimensions of their transistors, we have had to adopt reasonable assumptions to create a structure consistent with the device performance results. (...)
more... (article, p. 21 ff.)

Source: Compound Semiconductor, October 2011, p. 23/24