Removing sapphire substrate from light-emitting diodes without cracking

Source: Semiconductor Today, 01.12.2017

Ferdinand-Braun-Institut and Technische Universität Berlin in Germany have developed a fabrication process for deep ultraviolet (DUV) light-emitting diodes (LEDs) that allows laser lift-off (LLO) separation of the sapphire growth substrate without chipping or cracking damage of the device.
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