HiPoSwitch project completed with development of fast, efficient normally-off GaN-on-Si power transistors

Lasting from September 2011 to end-August 2014 with a budget of €5.57m (including €3.58m of funding from the European Union), the recently completed three-year project HiPoSwitch ('High Power Switch') has developed prototype fast, high-efficiency power switches using gallium nitride (GaN) operating in enhancement-mode. Such transistors are essential for producing energy-efficient, compact and light-weight power converters that make electrical energy more usable. The market potential is reckoned to be enormous, since these converters are found in nearly every electronic device.
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