FBH reports 1.8kV-breakdown gallium oxide MOSFET with record power figure of merit

The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany has developed gallium oxide (ß-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) that provide a high breakdown voltage combined with high current conductivity
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