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FBH-led project ‘power transistors based on AlN (ForMikro-LeitBAN)’ launched

Source: Semiconductor Today, 29.11.2019

Coordinated by the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany, the recently launched joint project ‘power transistors based on AlN (ForMikro-LeitBAN)’ aims to develop highly efficient power semiconductors that can pave the way for a wide range of novel applications – from e-mobility to artificial intelligence.
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