European Project Aims to Develop Beta-Gallium Oxide Power Devices

The recently launched joint project "ForMikro-GoNext" of the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand Braun Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd. and AIXTRON is studying the feasibility of developing commercial beta-gallium oxide (β-Ga₂O₃) power semiconductors.
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