Enhancing InP HBTs with transferred substrate technology

Optimising high frequency and power performance, the 3" wafer-level process enables lithographic access to both the front- and backside of an Indium phosphide HBT. The vital step in gaining access to both sides is to completely remove the supporting substrate.
At the Ferdinand-Braun-Institut (FBH), a transferred substrate (TS) technology has been established to optimise high frequency and power performance of InP heterojunction bipolar transistors (HBTs).
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Source: Compound Semiconductor, 12.04.2012