Demonstration of GaN-based near UV laser diodes

The Fedinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed low-threshold gallium nitride (GaN) based edge-emitting laser diodes (LDs) emitting in the near ultraviolet spectral range. Based on previous developments of blue-violet InGaN quantum well LDs operating in cw mode, we were able to realize laser structures emitting below 390 nm with threshold current densities as low as 2 kA/cm² in pulsed operation.
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