Progress and Challenges of Vertical GaN Trench MOSFETs on GaN Substrates
Scientists will present the latest research findings on the following topic:
- Progress and Challenges of Vertical GaN Trench MOSFETs on GaN Substrates
- Prof. Dr. Tohru Oka, Nagoya University, Japan
The event will take place on 04.07.2025 from 11:00 to 12:00 at the Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489 Berlin, seminar room 1 + 2.
You are cordially invited!