Special Devices

The high competence of the FBH on metalorganic vapour phase epitaxy and the pricise and high-purity deposition of complex semiconductor heterostructures allows for the realization of optical and optoelectronic devices beyond the core business of edge emitting, monolitic and hybrid diode lasers.

 

Based on the GaAs materials system these are devices with distributed Bragg relectors (DBRs):

-          High-purity DBRs are used in metrology for the next generation atomic clock or for precise measurements in quantum electrodynamics.

-          For ultra short term operation of semiconductor disk laser, the disk laser and the saturable absorber mirror (SESAM) are developed. The SESAMs developed at the FBH are also used in commercialized short-pulsed solid state laser systems.

-          The competence on surface emitting laser diodes (VCSEL) is momentarily not utilized in projects. But it is available instantaneous.

 

Based on the GaN materials system photodetectors covering the spectral range form near-UV to deep UV are developed. Their features, solar blindness and robustness against high-energetic irradiation, offer a broad spectrum of applications.  For the UV-A spectral range InGaN and GaN absorber layers are applied. For the UV-B and -C ranges AlGaN detectors are used. The processing of metal-semiconductor-metal detectors (MSM) is accomplished in cooperation with the FBH deparement GaN-optoelectronics.

The high competence of the FBH concerning the metalorganic vapour phase epitaxy and the precise and high-purity deposition of complex semiconductor heterostructures allows for the realization of optical and optoelectronic devices beyond the core business of edge emitting, monolithic and hybrid laser diodes.

Based on GaAs these are devices with epitaxially grown distributed Bragg reflectors (DBRs):

High-purity DBRs are used in metrology for next generation atomic clock or  precise measurements in quantum electrodynamics.

For the ultra short term operation of semiconductor

 

 Für den Ultrakurzzeit-Betrieb von Halbleiterscheibenlasern werden sowohl die Scheibenlaser selber als auch sättigbare Halbleiterabsorber (SESAM) hergestellt. Die im FBH entwickelten SESAMs werden auch in kommerziellen Kurzpuls-Lasersystemen auf der Basis von Festkörperlasern eingesetzt.  Die Kompetenz bei oberflächenemittierenden Laserdioden (VCSEL) wird derzeit nicht in Projekten genutzt, auf sie kann jedoch jederzeit wieder zurück gegriffen werden.

 

Auf der Basis von GaN werden Photodetektoren für den nahen bis fernen UV-Bereich entwickelt, die durch ihre Solarblindheit und hohe Strahlungsfestigkeit ein breites Einsatzspektrum ermöglichen. Für den UV-A-Bereich werden Absorberschichten aus InGaN und GaN verwendet. Mit Absorberschichten aus AlGaN werden Detektoren bis in den VUV-Bereich entwickelt. Die Prozessierung der Halbleiterschichten zu MSM-Detektoren (metal-semiconductor-metal) erfolgt in Kooperation mit dem Geschäftbereich GaN-Optoelektronik

Special Optical Devices

The high competence of the FBH on metalorganic vapor phase epitaxy and the precise and high-purity deposition of complex semiconductor heterostructures allows for the realization of optical and optoelectronic devices beyond the core business of edge emitting, monolithic and hybrid diode lasers.

Devices with distributed Bragg reflectors

Based on the GaAs materials system FBH develops devices with distributed Bragg reflectors (DBRs):

  • High-purity DBRs are used in metrology for next generation atomic clocks as well as for precise measurements in quantum electrodynamics.
  • For the generation of ps and fs laser pulses, saturable absorber mirrors (SAM) are developed together with partners. They apply them in commercial short-pulse solid-state laser systems.
  • The competence on surface emitting laser diodes (VCSEL) is momentarily not utilized in projects, but instantaneously available.

Photodetectors

Based on the AlGaN materials system, photodetectors covering the spectral range form near UV to deep UV are developed. Their features, solar blindness and robustness against high-energetic irradiation, enable a broad spectrum of applications. For the UV-B and -C ranges AlGaN MSM detectors (metal-semiconductor-metal) are developed, which feature low dark currents in the pA-range and high quantum efficiency of up to 70% at low bias voltage.