Diode Laser Technology

Through close co-operation with the Optoelectronics Department at FBH, the Joint Lab Quantum Photonic Components builds on FBH’s strong, internationally renowned competence in optoelectronic semiconductor technology. GaAs-based diode lasers are best suited for the industrialization of quantum sensor applications for a number of unique selling points they feature:

  • GaAs-based diode laser technology directly covers the wavelength range from 630 nm to 1180 nm. Hence, a single technology can serve a multitude of tasks for a given quantum sensor (e.g., cooling and interrogation lasers at vastly different wavelengths) and is as well suited for a multitude of quantum sensor types.
  • The frequency range accessible with GaAs-based diode lasers can be extended into the visible and ultra-violet as well as into the near- and mid-infrared wavelength range by non-linear frequency conversion techniques. This makes GaAs diode laser technology the work horse technology for quantum optical applications.
  • Diode laser technology provides the most energy-efficient lasers currently available. This is important in applications where energy consumption and dissipation matters, e.g., in space applications.
  • Diode laser technology provides the most compact sources of optical gain. It is this unique feature that allows hybrid integration technologies to deliver the most compact laser modules available.
  • Compactness also implies robustness. This is an important feature for operation in any real-world application scenario.

Development of concepts and of hardware for quantum optical applications is equally beneficial to other fields of application that require, for example, ultra-compact and robust narrow linewidth lasers. Activities of the Joint Lab Quantum Photonic Components hence also specifically include the development of laser technology for inter-satellite free-space communication.