S. Arslan, A. Boni, A. Maaßdorf, G. Erbert, D. Martin, J. Fricke and P. Crump

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2021), Munich, Germany, Jun. 21-25, virtual event, ISBN: 978-1-6654-1876-8, cb-2-4 (2021).

Abstract:

High-power GaAs-based diode lasers are the most efficient light sources and thus used in many industrial applications. Higher peak output power (P_opt) and efficiency (η_E) are sought to reduce operating cost (€/W) [1] , but P_opt is limited by a range of interacting saturation mechanisms. Improved experimental diagnosis of the dominant effects with lateral and longitudinal hole-burning effects playing a key role is needed and ways to address these issues need to be found [2] . For a given device construction, improvements to the (vertical) epitaxial layer design can lead to strong improvements in both P_opt and η_E. Here, we study devices with resonator length L = 4 mm and stripe width W = 90 µm, mounted junction down on CuW carriers, with operating wavelength λ ∼ 970 nm. As previously reported, although such L = 4 mm, W = 90 µm devices show high peak η_E when using asymmetric large optical cavity (ASLOC) epitaxial designs, both P_opt and η_E are strongly improved through the use of extreme triple asymmetric (ETAS) designs. These ETAS designs use thin p-side waveguide and asymmetric graded index layers in the vicinity of the quantum well (QW) to reduce series resistance, carrier leakage and optical loss [3] . In a previous study, it is shown that compared to the ASLOC structure P_opt and η_E increases from 14 W to 19 W and 65% to 67%, respectively, at 25 °C under continuous wave (CW) operation using ETAS structures.

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