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Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model Parameters

P. Beleniotis1, S. Chevtchenko2, M. Rudolph1,2

Published in:

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 63-66 (2022).


A statistical physics-based model for GaN HEMTs with a direct transfer of variations to model parameters is proposed in this paper. This statistical approach includes the collection of available data from process control monitor (PCM) on-wafer measurements and their transfer to the respective physical model parameters. Three main variables are analyzed and used in the simulations. Those are the semiconductor sheet resistance Rsh, the ohmic contact resistance Rc and the threshold voltage Vth. The model’s performance is validated by comparing Monte Carlo large-signal simulations and measurements of several devices on the same wafer.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques, Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany


Compact model, GaN HEMT, large signal, Monte Carlo, statistical modeling.

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