Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications
C. Andrei1, O. Bengtsson2, R. Doerner2, S.A. Chevtchenko2, M. Rudolph1,2
IEEE MTT-S Int. Microw. Symp. Dig., Phoenix, USA, May 17-22, WE3B-4 (2015).
A robust two-stage low-noise amplifier based on GaN technology is presented. The MMIC LNA is realized using stacked transistors in the first stage to obtain high ruggedness. The LNA survived a record value of 43 dBm of input power at 5 GHz measured in a coaxial test fixture without any visible degradation of the transistors. The results prove that the new stacked architecture allows the LNA to withstand twice the CW input power expected for the conventional topology.
1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
low noise amplifier, stacked amplifier, ruggedness, monolithic microwave integrated circuit (MMIC) amplifiers, noise.
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